| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMG4N65CTI is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a drain-source breakdown voltage of 650V and a continuous drain current of 4A at 25°C case temperature, with a maximum on-resistance of 3Ω at VGS = 10V and ID = 2A. The device offers low input capacitance of 900pF and a gate charge of 13.5nC, contributing to fast switching performance.
This MOSFET is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive and industrial applications. It is lead-free, RoHS compliant, and halogen and antimony free, meeting environmental requirements. The device is housed in an ITO220AB full pack with isolated tab, providing electrical isolation and simplifying heat sinking.
With a maximum power dissipation of 8.35W at 25°C ambient and an operating junction temperature range of -55°C to 150°C, the DMG4N65CTI is suitable for a variety of power conversion and control circuits. Its through-hole mounting and tube packaging (50 pieces per tube) facilitate easy integration into PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 650V.
The maximum continuous drain current is 4A at TC = 25°C.
The maximum on-resistance is 3Ω at VGS = 10V and ID = 2A.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-220-3 Full Pack with isolated tab (ITO220AB) through-hole package.
Yes, it is RoHS3 compliant.