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DMG4812SSS-13 N-Channel MOSFET with 30V drain-source voltage and 8A continuous drain current. Features low on-resistance of 15mOhm at 10V gate drive.
Mfr Part #:

DMG4812SSS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel MOSFET with 30V drain-source voltage and 8A continuous drain current. Features low on-resistance of 15mOhm at 10V gate drive.
✓ Total Stock: 29,879 pcs

DMG4812SSS-13 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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29,879 pcs
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29879 pcs On Request 1 On Request On Request 1316+ On Request On Request
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DMG4812SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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DMG4812SSS-13 Description

Short technical summary and product information.

The DMG4812SSS-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 8A (10.7A for short duration). The device integrates a Schottky diode using Diodes' patented DIOFET process, reducing body diode conduction losses and improving switching performance.

 

Key electrical characteristics include a maximum on-resistance of 15mOhm at VGS=10V and 18.5mOhm at VGS=4.5V. The gate threshold voltage is typically 2.3V maximum at ID=250µA. The MOSFET offers low gate charge (18.5nC at 10V) and input capacitance (1849pF at VDS=15V), enabling efficient high-frequency switching. It is ESD protected and qualified to AEC-Q101 standards for automotive reliability.

 

The device is housed in an 8-SOIC surface-mount package with gull-wing leads and a 1.27mm lead pitch. It is supplied in tape and reel packaging with 2500 units per reel. The component is RoHS3 compliant, lead-free, halogen-free, and has an MSL rating of Level 1 (unlimited).

DMG4812SSS-13 Quick Information

Product Type: Single MOSFET
Canonical Name: N-Channel MOSFET, 30V Vds, 8A Id, 8-SOIC
Subcategory: Single MOSFET

DMG4812SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMG4812SSS-13 Features

  • N-Channel enhancement mode MOSFET.
  • Low on-resistance: 15mOhm at 10V.
  • Integrated Schottky diode for reduced losses.
  • ESD protected.
  • AEC-Q101 qualified for automotive.

DMG4812SSS-13 Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management functions.
  • Ideal for high-efficiency switching applications.

DMG4812SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the package type?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

8A at TA=+25°C, VGS=10V, steady state; 10.7A for t≤10s.

What is the gate threshold voltage?

Maximum 2.3V at ID=250µA.

Is it AEC-Q101 qualified?

Yes, qualified to AEC-Q101 standards.

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