DMG4800LSD-13 Dual N-channel enhancement mode MOSFET from Diodes Incorporated rated for 30V drain-to-source voltage and 7.5A continuous drain current in an SO-8 package.
Mfr Part #:

DMG4800LSD-13

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET from Diodes Incorporated rated for 30V drain-to-source voltage and 7.5A continuous drain current in an SO-8 package.
✓ Total Stock: 63,769 pcs
$ Price Range: $0.21 - $0.97

DMG4800LSD-13 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

DMG4800LSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

DMG4800LSD-13 Description

Short technical summary and product information.

DMG4800LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is housed in an SO-8 package and supports surface mount assembly. The device has a drain-to-source voltage rating of 30V and a continuous drain current of 7.5A. Maximum on-state resistance is 16mΩ at a gate-to-source voltage of 10V with a drain current of 9A, helping to minimize conduction losses in power switching circuits.

 

The dual MOSFET configuration integrates two independent N-channel devices in a single 8-SOIC package, saving board space and simplifying matching in circuits such as DC-DC converters, power management functions, and backlighting applications. The SO-8 package measures 0.154 inch (3.90mm) width and uses matte tin annealed over a copper leadframe. The device is rated as fully lead-free and RoHS compliant, and the package material is rated UL flammability 94V-0 with moisture sensitivity level 1 per J-STD-020.

 

With low gate charge, the DMG4800LSD-13 is suitable for switching applications where efficiency is important. It is qualified to JEDEC standards and is available in tape and reel packaging with 2,500 units per reel.

DMG4800LSD-13 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Dual N-Channel Enhancement Mode MOSFET
Subcategory: Transistors - FETs, MOSFETs - Arrays

DMG4800LSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

DMG4800LSD-13 Estimated Pricing

Qty Low High
1+ $0.97 $0.97
10+ $0.60 $0.60
25+ $0.50 $0.50
50+ $0.44 $0.44
100+ $0.39 $0.39
2,500+ $0.24 $0.24
7,500+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG4800LSD-13 Features

  • Dual N-channel enhancement mode MOSFET design.
  • 30V drain-to-source voltage rating.
  • 7.5A continuous drain current capability.
  • 16mΩ maximum on-resistance at 10V gate drive.
  • Surface mount SO-8 package for compact layouts.

DMG4800LSD-13 Applications

  • Ideal for DC-DC converter power stages.
  • Used in power management functions.
  • Suitable for backlighting applications.
  • Useful for high efficiency switching circuits.

DMG4800LSD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the DMG4800LSD-13?

The DMG4800LSD-13 has a drain-to-source voltage rating of 30V.

What package is the DMG4800LSD-13 available in?

The DMG4800LSD-13 comes in an 8-SOIC (0.154", 3.90mm Width) package, also referred to as SO-8, with a supplier device package of 8-SO.

Is the DMG4800LSD-13 RoHS compliant?

Yes, the DMG4800LSD-13 is fully RoHS compliant, lead-free, and halogen and antimony free according to the Diodes datasheet.

What is the MOSFET configuration of the DMG4800LSD-13?

It has a 2 N-Channel (Dual) configuration.

What technology is used in the DMG4800LSD-13?

MOSFET (Metal Oxide) technology.

How is the DMG4800LSD-13 mounted?

The component is surface mount.

What is the maximum on-state resistance of the DMG4800LSD-13?

The maximum on-state resistance is 16mΩ at VGS=10V and ID=9A.

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