| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
154 pcs
|
154 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMG4435SSS-13 is a P-Channel enhancement-mode MOSFET from Diodes Incorporated, designed for load switching and power management applications. It is rated for a drain-source voltage of 30V and can handle a continuous drain current of 7.3A at 25°C. The device exhibits a low on-resistance of 16mΩ maximum at 11A drain current with 20V gate drive, ensuring efficient power handling.
Gate threshold voltage is typically 2.5V maximum at 250µA drain current, and the maximum gate-source voltage is ±25V. The MOSFET has a gate charge of 35.4nC at 10V and an input capacitance of 1614pF at 15V drain-source voltage, making it suitable for moderate-frequency switching. Power dissipation is rated at 2.5W at ambient temperature, with an operating junction temperature range of -55°C to 150°C.
The DMG4435SSS-13 is supplied in an 8-SOIC surface mount package (0.154", 3.90mm width), with a supplier device package of 8-SO. This package is well-suited for automated assembly and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
It is claimed to be RoHS3 Compliant, but this status is unverified and should be treated as low confidence.
The maximum gate threshold voltage is 2.5V at 250µA drain current.
The maximum drain-source on-resistance is 16mΩ at 11A drain current and 20V gate drive.
The maximum gate charge is 35.4nC at 10V gate-source voltage.