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DMG3415U-7 P-Channel enhancement mode MOSFET with 20V drain-source breakdown voltage and 4A continuous drain current. Designed for low on-resistance and fast switching in power management applications.
Mfr Part #:

DMG3415U-7

Available from 7 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET with 20V drain-source breakdown voltage and 4A continuous drain current. Designed for low on-resistance and fast switching in power management applications.
✓ Total Stock: 44,245 pcs
$ Price Range: $0.19 - $0.48

DMG3415U-7 Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMG3415U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMG3415U-7 Description

Short technical summary and product information.

The DMG3415U-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It features a drain-source breakdown voltage of 20V and a continuous drain current of 4A at 25°C. The device offers low on-resistance of 42.5mΩ at VGS=-4.5V and 71mΩ at VGS=-1.8V, making it suitable for high-efficiency power management applications. The MOSFET is housed in a compact SOT-23-3 surface mount package, with a weight of 0.008 grams. It is RoHS compliant, halogen-free, and has an MSL rating of Level 1. The device also includes ESD protection up to 3kV. Typical applications include DC-DC converters and power management functions.

DMG3415U-7 Quick Information

Product Type: MOSFET - Single
Series: DMG3415U
Canonical Name: DMG3415U-7 P-Channel MOSFET 20V 4A SOT-23-3
Subcategory: Single MOSFET

DMG3415U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMG3415U-7 Estimated Pricing

Qty Low High
1+ $0.48 $0.48
10+ $0.30 $0.30
100+ $0.19 $0.19
3,000+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG3415U-7 Features

  • P-Channel enhancement mode MOSFET.
  • 20V drain-source breakdown voltage.
  • 4A continuous drain current at 25°C.
  • Low on-resistance of 42.5mΩ at 4.5V.
  • ESD protected up to 3kV.

DMG3415U-7 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management functions.
  • Suitable for load switching applications.
  • Designed for high-efficiency power management.

DMG3415U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the DMG3415U-7?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMG3415U-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum continuous drain current?

4A at TA=25°C with VGS=-4.5V; 2A at VGS=-1.8V.

What is the on-resistance (RDS(on))?

42.5mΩ maximum at VGS=-4.5V; 71mΩ maximum at VGS=-1.8V.

What is the gate charge?

9.1nC maximum at VGS=4.5V.

Does the device have ESD protection?

Yes, ESD protected up to 3kV.

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