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DMG3414U-7 DMG3414U-7 is a 20V, 4.2A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance of 25mΩ at 4.5V and is housed in a SOT23-3 package.
Mfr Part #:

DMG3414U-7

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMG3414U-7 is a 20V, 4.2A N-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features low on-resistance of 25mΩ at 4.5V and is housed in a SOT23-3 package.
✓ Total Stock: 197,580 pcs
$ Price Range: $0.29 - $0.91

DMG3414U-7 Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMG3414U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Material
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMG3414U-7 Description

Short technical summary and product information.

The DMG3414U-7 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for low-voltage switching applications. It has a maximum drain-source voltage of 20V and a continuous drain current of 4.2A at 25°C. The device offers low on-resistance: 25mΩ at VGS=4.5V, 29mΩ at VGS=2.5V, and 37mΩ at VGS=1.8V, minimizing conduction losses. Input capacitance is 829.9pF at VDS=10V, and gate charge is 9.6nC at VGS=4.5V, enabling efficient switching. The gate threshold voltage is 900mV max at ID=250µA.

 

The MOSFET is housed in a compact SOT23-3 surface-mount package, suitable for space-constrained designs. It is rated for an operating temperature range of -55°C to 150°C. The device is RoHS3 compliant, lead-free, and halogen-free, meeting environmental standards. Typical applications include load switching, power management, and DC-DC converter circuits in portable and industrial electronics.

DMG3414U-7 Quick Information

Product Type: N-Channel MOSFET
Series: DMG3414U
Canonical Name: DMG3414U-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single N-Channel MOSFET

DMG3414U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMG3414U-7 Estimated Pricing

Qty Low High
1+ $0.91 $0.91
10+ $0.46 $0.46
100+ $0.40 $0.40
500+ $0.29 $0.29
3,000+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG3414U-7 Features

  • Low on-resistance: 25mΩ at 4.5V.
  • Rated for 20V drain-source voltage.
  • Continuous drain current up to 4.2A.
  • Low gate charge for fast switching.
  • Compact SOT23-3 surface mount package.

DMG3414U-7 Applications

  • Ideal for load switching applications.
  • Used in power management circuits.
  • Suitable for DC-DC converter designs.
  • Works in battery-powered devices.

DMG3414U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMG3414U-7?

20V.

What package is the DMG3414U-7 available in?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C.

Is the DMG3414U-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum continuous drain current at 25°C?

4.2A.

What is the on-resistance at VGS=4.5V?

25mΩ.

What is the gate charge of the DMG3414U-7?

9.6nC at VGS=4.5V.

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