| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,316 pcs
|
2316 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| UL Flammability Rating | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMG2305UXQ-7 is a P-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for automotive and general-purpose power management applications. It features a drain-source breakdown voltage of -20 V and a maximum continuous drain current of -4.2 A (at VGS=-4.5V, TA=25°C).
With a low on-resistance of 52 mΩ at VGS=-4.5V and 100 mΩ at VGS=-2.5V, this MOSFET provides efficient switching and conduction. It has a gate threshold voltage of 900 mV at ID=250 µA and a gate charge of 10.2 nC at VGS=4.5V. The input capacitance is 808 pF at VDS=15V.
The device is housed in a surface-mount SOT-23-3 package with a power dissipation of 1.4 W at TA=25°C. It is qualified to AEC-Q101 standards, lead-free, RoHS compliant, and halogen-free. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
| 10+ | $0.29 | $0.29 |
| 100+ | $0.19 | $0.19 |
| 500+ | $0.14 | $0.14 |
| 1,000+ | $0.12 | $0.12 |
| 3,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-4.2 A (steady state) and -5.0 A (t<10s) at VGS=-4.5V
52 mΩ maximum
900 mV maximum at ID=250µA
808 pF maximum at VDS=15V
SOT-23