| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
974 pcs
|
974 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Operating Temperature | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DMG204010R is a composite bipolar junction transistor array from Panasonic Electronic Components, integrating one NPN and one PNP transistor in a single SOT-23-6 surface-mount package. This complementary pair is designed for general-purpose switching and amplification applications where space is at a premium.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V and a power dissipation rating of 300mW. The device offers a typical transition frequency of 150 MHz and a minimum DC current gain (hFE) of 210 at 2mA collector current and 10V collector-emitter voltage. Collector-emitter saturation voltage is 300mV for the NPN transistor and 500mV for the PNP transistor, both tested at 10mA base current and 100mA collector current.
The DMG204010R is supplied in the Mini6-G4-B package variant of the SOT-23-6 footprint, making it suitable for compact PCB layouts. It is designed for surface mount assembly and has a maximum junction temperature rating of 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.09 | $0.09 |
| 15,000+ | $0.08 | $0.08 |
| 21,000+ | $0.08 | $0.08 |
| 30,000+ | $0.08 | $0.08 |
| 75,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The maximum power dissipation is 300mW.
The DMG204010R is available in a SOT-23-6 surface-mount package, specifically the Mini6-G4-B supplier device package.
The maximum junction temperature is 150°C.
The typical transition frequency (ft) is 150 MHz.
The minimum DC current gain (hFE) is 210 at a test condition of Ic=2mA and Vce=10V.
The maximum Vce saturation is 300mV for the NPN transistor and 500mV for the PNP transistor, both tested at Ib=10mA and Ic=100mA.