DMG1029SVQ-7 The DMG1029SVQ-7 is a MOSFET manufactured by Diodes Incorporated. It offers a 60V drain-source breakdown voltage and is available in a SOT-563 package.
Mfr Part #:

DMG1029SVQ-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMG1029SVQ-7 is a MOSFET manufactured by Diodes Incorporated. It offers a 60V drain-source breakdown voltage and is available in a SOT-563 package.
✓ Total Stock: 10,235 pcs
$ Price Range: $2.93

DMG1029SVQ-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
215 pcs
215 pcs On Request 1 On Request On Request On Request On Request On Request

DMG1029SVQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Mounting Style

DMG1029SVQ-7 Description

Short technical summary and product information.

The DMG1029SVQ-7 is a MOSFET from Diodes Incorporated, designed for electronic applications requiring efficient switching. This component features a drain-source breakdown voltage ranging from 41V to 60V and a continuous drain current of up to 500 mA. The on-resistance is specified between 1.7 Ohms and 4 Ohms.

 

This MOSFET operates within a temperature range of -55 C to +150 C, with a power dissipation of 1W. It is supplied in a SOT-563 surface-mount package, typically on tape and reel with a factory pack quantity of 3000 units. The gate-source voltage is rated at 20V.

 

Key electrical characteristics include a gate charge of 0.28 nC to 0.3 nC, a minimum forward transconductance of 50 Ms, and switching times such as a fall time of 9.9 ns and a rise time of 3.4 ns. The typical turn-on delay time is 3.9 ns, and the typical turn-off delay time is 10.6 ns.

DMG1029SVQ-7 Quick Information

Product Type: MOSFET
Canonical Name: DMG1029SVQ-7 Dual N-Channel, P-Channel MOSFET
Subcategory: MOSFETs

DMG1029SVQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMG1029SVQ-7 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG1029SVQ-7 Features

  • 60V drain-source breakdown voltage.
  • 1.7 to 4 Ohms drain-source resistance.
  • SOT-563 surface-mount package.
  • -55 C to +150 C operating temperature.
  • Fast switching times in ns range.

DMG1029SVQ-7 Applications

  • Suitable for load switch applications.
  • Used in power management circuits.
  • Ideal for low-power DC-DC converters.
  • Works in battery-powered devices.
  • Designed for signal switching.

DMG1029SVQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMG1029SVQ-7?

The drain-source breakdown voltage (Vds) is 60V.

What is the continuous drain current rating?

The continuous drain current (Id) is 500 mA positive and -360 mA negative.

What is the on-resistance (Rds On) of this MOSFET?

The on-resistance ranges from 1.7 Ohms to 4 Ohms.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package does the DMG1029SVQ-7 come in?

It comes in a SOT-563-6 surface mount package.

What is the gate charge of this device?

The gate charge (Qg) is 0.28 nC to 0.3 nC.

What are the switching times for the DMG1029SVQ-7?

Rise time is 3.4 to 7.9 ns, fall time is 9.9 to 11.6 ns, turn-on delay is 3.9 to 5.5 ns, and turn-off delay is 10.6 to 15.7 ns.

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