DMG1029SV-7 DMG1029SV-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated. It features N and P-channel devices with 60V drain-source voltage and 500mA continuous drain current.
Mfr Part #:

DMG1029SV-7

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMG1029SV-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated. It features N and P-channel devices with 60V drain-source voltage and 500mA continuous drain current.
✓ Total Stock: 185,576 pcs
$ Price Range: $0.23 - $0.67

DMG1029SV-7 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

DMG1029SV-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight

DMG1029SV-7 Description

Short technical summary and product information.

The DMG1029SV-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, designed for general purpose interfacing and power management applications. It integrates both N-channel and P-channel MOSFETs in a single SOT-563 package, offering a compact solution for space-constrained designs.

 

Key electrical specifications include a drain-source voltage rating of 60V for both channels, with the N-channel capable of 500mA continuous drain current and the P-channel 360mA. The device features low on-resistance: 1.7Ω for the N-channel at VGS=10V and 4Ω for the P-channel at VGS=-10V. Gate threshold voltage is typically 2.5V, enabling logic-level drive. Input capacitance is 30pF and gate charge is 0.3nC, supporting fast switching.

 

The MOSFET is housed in an ultra-small SOT-563 surface mount package, with matte tin finish over copper leadframe. It is RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive reliability. Moisture sensitivity level is 1 per J-STD-020.

 

Typical applications include general purpose interfacing switches, power management functions, and analog switches. The device's low on-resistance and fast switching make it suitable for high efficiency power management.

DMG1029SV-7 Quick Information

Product Type: Complementary Pair MOSFET
Canonical Name: DMG1029SV-7 Complementary Pair Enhancement Mode MOSFET
Subcategory: Enhancement Mode MOSFET

DMG1029SV-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

DMG1029SV-7 Estimated Pricing

Qty Low High
1+ $0.67 $0.67
10+ $0.30 $0.30
100+ $0.26 $0.26
1,000+ $0.23 $0.23
3,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG1029SV-7 Features

  • Complementary N and P-channel MOSFETs in one package.
  • Low on-resistance: 1.7Ω (N-ch) at 10V.
  • Logic level gate drive with 2.5V threshold.
  • Ultra-small SOT-563 surface mount package.
  • AEC-Q101 qualified for automotive reliability.

DMG1029SV-7 Applications

  • General purpose interfacing switch.
  • Power management functions.
  • Analog switch applications.
  • High efficiency power management.

DMG1029SV-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V for both N and P-channel.

What package is the DMG1029SV-7 available in?

SOT-563 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMG1029SV-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the continuous drain current?

500mA for N-channel, 360mA for P-channel.

What is the gate threshold voltage?

Maximum 2.5V at ID=250µA.

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