| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
510 pcs
|
510 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Lead Style | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The DMG1016UDWQ-7 from Diodes Incorporated is a versatile N/P-Channel MOSFET Array designed for a wide range of electronic applications. This component features a drain-to-source voltage (Vdss) of 20V. It offers a continuous drain current (Id) of 1.066A for the N-channel and 845mA for the P-channel at 25°C, with a power dissipation of 330mW.
The MOSFET array is housed in a compact SOT-363 surface-mount package, making it suitable for space-constrained designs. The device is configured as complementary N and P-channel FETs, providing flexibility in circuit design. Its construction is based on MOSFET (Metal Oxide) technology.
This component is suitable for applications requiring complementary switching or level shifting. The surface-mount package facilitates automated assembly processes. The RoHS status is compliant, and it is supplied in tape and reel packaging for efficient handling and integration into manufacturing lines.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the DMG1016UDWQ-7 is 20V.
The continuous drain current (Id) at 25°C is 1.066A for the N-channel and 845mA for the P-channel.
The DMG1016UDWQ-7 is supplied in a SOT-363 surface mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.