DMG1016UDW-7 The DMG1016UDW-7 is a complementary N and P-channel enhancement mode MOSFET array from Diodes Incorporated. It features a 20V drain-source breakdown voltage and low on-resistance of 450mOhm (N-channel) and 750mOhm (P-channel).
Mfr Part #:

DMG1016UDW-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMG1016UDW-7 is a complementary N and P-channel enhancement mode MOSFET array from Diodes Incorporated. It features a 20V drain-source breakdown voltage and low on-resistance of 450mOhm (N-channel) and 750mOhm (P-channel).
✓ Total Stock: 930,304 pcs
$ Price Range: $0.12 - $0.56

DMG1016UDW-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
928,020 pcs
928020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,284 pcs
2284 pcs On Request 1 On Request On Request On Request On Request On Request

DMG1016UDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight

DMG1016UDW-7 Description

Short technical summary and product information.

The DMG1016UDW-7 is a complementary pair enhancement mode MOSFET array from Diodes Incorporated, integrating both an N-channel and a P-channel MOSFET in a single SOT363 package. This device is designed for high-efficiency power management applications, offering low on-resistance (450mOhm for the N-channel at Vgs=4.5V and 750mOhm for the P-channel at Vgs=-4.5V) and low input capacitance (60.67pF).

 

The MOSFETs have a drain-source breakdown voltage of 20V, with the N-channel rated for 1.066A and the P-channel for 845mA continuous drain current at 25°C. The device features ESD protection and is fully RoHS compliant, halogen and antimony free.

 

The DMG1016UDW-7 is supplied in a surface-mount SOT363 package with matte tin finish terminals, suitable for automated assembly. It is qualified to JEDEC standards and has a moisture sensitivity level of 1.

DMG1016UDW-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMG1016UDW-7 Complementary N and P-Channel Enhancement Mode MOSFET
Subcategory: Complementary Pair Array

DMG1016UDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

DMG1016UDW-7 Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.38 $0.38
100+ $0.24 $0.24
500+ $0.15 $0.15
1,000+ $0.13 $0.13
3,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG1016UDW-7 Features

  • Complementary N and P-channel MOSFET pair.
  • Low on-resistance: 450mOhm N-channel, 750mOhm P-channel.
  • Low input capacitance of 60.67pF.
  • ESD protected device.
  • RoHS compliant and halogen free.

DMG1016UDW-7 Applications

  • Ideal for battery operated systems.
  • Used in solid-state relay drivers.
  • Suitable for power supply converter circuits.
  • Drives relays, solenoids, and lamps.

DMG1016UDW-7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the DMG1016UDW-7?

The DMG1016UDW-7 is available in a 6-TSSOP, SC-88, SOT-363 surface mount package.

What is the operating temperature range of the DMG1016UDW-7?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the DMG1016UDW-7 RoHS compliant?

Yes, the DMG1016UDW-7 is fully RoHS compliant and is also halogen and antimony free.

What are the drain current ratings for the N-channel and P-channel MOSFETs?

The N-channel MOSFET (Q1) has a drain current of 1.066A, and the P-channel MOSFET (Q2) has a drain current of 845mA at 25°C.

What is the on-resistance of the N-channel MOSFET?

The N-channel MOSFET has a maximum on-resistance of 450mOhm at Vgs=4.5V and Id=600mA.

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