DMG1013UW-7 P-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source breakdown voltage, 820mA continuous drain current, and low on-resistance of 750mOhm.
Mfr Part #:

DMG1013UW-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET from Diodes Incorporated. Features 20V drain-source breakdown voltage, 820mA continuous drain current, and low on-resistance of 750mOhm.
✓ Total Stock: 483,020 pcs
$ Price Range: $0.06 - $0.32

DMG1013UW-7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
451,020 pcs
451020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
27,000 pcs
27000 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMG1013UW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMG1013UW-7 Description

Short technical summary and product information.

The DMG1013UW-7 is a P-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low-power switching applications requiring a small footprint. The device features a drain-source breakdown voltage of 20V (minimum) and a continuous drain current of 820mA at 25°C ambient temperature. On-resistance is typically 750mOhm maximum at VGS=4.5V and ID=430mA. The gate threshold voltage is 1V maximum at ID=250µA, allowing low-voltage drive. Input capacitance is 59.76pF maximum at VDS=16V, and total gate charge is 0.622nC maximum at VGS=4.5V, enabling fast switching. The MOSFET is ESD protected and qualified to AEC-Q101 standards for automotive reliability. It is housed in a surface-mount SOT-323 package (SC-70 compatible) with matte tin finish over Alloy 42 leadframe. The device is RoHS3 compliant, halogen and antimony free, and has a moisture sensitivity level of 1. Operating temperature range is -55°C to 150°C junction. Maximum power dissipation is 310mW at 25°C ambient. Thermal resistance junction-to-ambient is 398°C/W when mounted on FR-4 PCB with minimum pad layout.

DMG1013UW-7 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: DMG1013UW-7 P-Channel Enhancement Mode MOSFET
Subcategory: P-Channel MOSFET

DMG1013UW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMG1013UW-7 Estimated Pricing

Qty Low High
1+ $0.32 $0.32
10+ $0.19 $0.19
100+ $0.13 $0.13
500+ $0.10 $0.10
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG1013UW-7 Features

  • Low on-resistance of 750mOhm at 4.5V drive.
  • Low gate threshold voltage of 1V for 1.8V logic.
  • ESD protected for robust operation.
  • Qualified to AEC-Q101 for automotive reliability.
  • Halogen and antimony free green device.

DMG1013UW-7 Applications

  • Ideal for load switching in portable electronics.
  • Used in battery management and protection circuits.
  • Suitable for power management in low-voltage systems.
  • Applicable in automotive body control modules.

DMG1013UW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the DMG1013UW-7?

SOT-323 (SC-70 compatible).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMG1013UW-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain-source voltage?

20V (minimum breakdown).

What is the continuous drain current at 25°C?

820mA.

What is the gate threshold voltage?

1V maximum at ID=250µA.

What is the on-resistance?

750mOhm maximum at VGS=4.5V, ID=430mA.

Home
Account

Categories