DMG1012UW-7 N-Channel enhancement mode MOSFET with 20V drain-source voltage and 1A continuous drain current, in a SOT323 surface mount package.
Mfr Part #:

DMG1012UW-7

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 20V drain-source voltage and 1A continuous drain current, in a SOT323 surface mount package.
✓ Total Stock: 541,511 pcs
$ Price Range: $0.07 - $0.33

DMG1012UW-7 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

DMG1012UW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMG1012UW-7 Description

Short technical summary and product information.

The DMG1012UW-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for low power switching applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 1A at 25°C ambient temperature. The device offers a low on-resistance of 450mOhm maximum at 4.5V gate drive, enabling efficient power management.

 

With a low gate threshold voltage of 1V maximum, the MOSFET can be driven by low-voltage logic. It also exhibits low input capacitance (60.67pF) and low gate charge (0.74nC), facilitating fast switching. The device is ESD protected up to 2kV, enhancing reliability in handling and operation.

 

The DMG1012UW-7 is housed in a compact SOT-323 surface mount package, making it suitable for space-constrained designs. It is fully RoHS compliant, lead-free, and halogen-free, meeting environmental standards. The operating temperature range is -55°C to 150°C, suitable for a wide range of environments.

DMG1012UW-7 Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: DMG1012UW-7 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel MOSFET

DMG1012UW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMG1012UW-7 Estimated Pricing

Qty Low High
1+ $0.33 $0.33
10+ $0.18 $0.18
100+ $0.13 $0.13
500+ $0.12 $0.12
3,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMG1012UW-7 Features

  • Low on-resistance of 450mOhm at 4.5V gate drive.
  • Low gate threshold voltage for 1.8V logic drive.
  • Low input capacitance and gate charge for fast switching.
  • ESD protection up to 2kV.
  • Totally lead-free and RoHS compliant.

DMG1012UW-7 Applications

  • Ideal for low power switching circuits.
  • Suitable for battery-powered portable devices.
  • Used in load switch and DC-DC converter applications.
  • Perfect for signal level shifting in digital logic.

DMG1012UW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMG1012UW-7?

20V.

What package does the DMG1012UW-7 come in?

SC-70, SOT-323 (supplier device package SOT-323).

What is the operating temperature range of the DMG1012UW-7?

-55°C to 150°C (junction temperature).

Is the DMG1012UW-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the maximum continuous drain current of the DMG1012UW-7?

1A at 25°C ambient temperature.

What is the typical on-resistance of the DMG1012UW-7?

450mOhm maximum at 600mA, 4.5V gate drive.

Does the DMG1012UW-7 have ESD protection?

Yes, it is ESD protected up to 2kV.

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