| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| ESD Protection | |
| Gate Charge | |
| Halogen Free | |
| Mounting Style | |
| Number of Channels | |
| Tape & Reel | |
| Technology |
The DMG1012TQ from Diodes Incorporated is an N-channel enhancement mode MOSFET designed for various applications. It features a low on-resistance of 400 mOhm at a gate-source voltage of 4.5V and a continuous drain current of up to 630mA at 25°C.
This MOSFET has a drain-source breakdown voltage (Vds) of 20V and a gate-source voltage (Vgs) rating of ±6V. It offers fast switching speeds with typical turn-on delay of 5.1ns and turn-off delay of 26.7ns. The device is ESD protected up to 2kV.
Packaged in a SOT-523 surface-mount case, the DMG1012TQ is suitable for applications requiring space efficiency. It is AEC-Q101 qualified, making it suitable for automotive applications. The device is also RoHS compliant, halogen-free, and antimony-free.
Key electrical characteristics include a typical gate threshold voltage of 500mV and a total power dissipation of 280mW at 25°C. The operating temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) is 20V.
The continuous drain current (Id) at 25°C is 630mA.
The on-resistance (Rds_on) is 400mOhm when VGS is 4.5V and ID is 600mA.
The DMG1012TQ is supplied in a SOT-523 package.
The operating temperature range is from -55°C to +150°C.
Yes, the DMG1012TQ is RoHS3 compliant.
Yes, the DMG1012TQ is halogen and antimony free.