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2,449,020 pcs
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46,357 pcs
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46357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,256 pcs
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2256 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,696 pcs
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1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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415 pcs
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415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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152 pcs
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152 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Id) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Vgs(th)) | |
| Gate-Source Voltage (Vgs) | |
| Halogen Free | |
| Input Capacitance (Ciss) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| On-Resistance (Rds On) | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Total Power Dissipation (Pd) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Diodes Incorporated DMG1012T-7 is an N-Channel enhancement mode MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 630mA at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 400mOhm at 600mA and 4.5V gate-source voltage, a gate-source voltage (Vgs) of ±6V, and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The MOSFET also boasts low input capacitance (Ciss) of 60.67pF and a gate charge (Qg) of 0.74nC.
This device offers fast switching speeds, low input/output leakage, and ESD protection up to 2kV. It operates within a temperature range of -55°C to 150°C.
The DMG1012T-7 is supplied in a SOT-523 surface mount package, making it suitable for space-constrained designs. It is manufactured using MOSFET (Metal Oxide) technology and is RoHS3 compliant.
The maximum drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 630mA (Ta).
The on-resistance (Rds On) is 400mOhm at 600mA and 4.5V.
The gate threshold voltage (Vgs(th)) is 1V at 250µA.
The operating temperature range is -55°C to 150°C (TJ).
The DMG1012T-7 is supplied in a SOT-523 package.
Yes, the DMG1012T-7 is RoHS3 compliant.