| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
711 pcs
|
711 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DMC561060R is a dual NPN pre-biased transistor array manufactured by Panasonic Electronic Components. Each transistor integrates a 4.7kΩ base resistor, simplifying circuit design by reducing external component count. The device is rated for a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 150mW.
This transistor array offers a minimum DC current gain (hFE) of 160 at Ic=5mA and Vce=10V, and a maximum Vce saturation voltage of 250mV at Ib=500µA and Ic=10mA. These characteristics make it suitable for low-power switching and amplification applications where space and component count are critical.
The DMC561060R is housed in a 6-SMD (5 leads) flat lead package, designated as SMini5-F3-B by the supplier. It is designed for surface mount assembly, enabling compact PCB layouts. The device is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified and should be confirmed with the manufacturer.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.12 | $0.12 |
| 6,000+ | $0.11 | $0.11 |
| 9,000+ | $0.11 | $0.11 |
| 15,000+ | $0.10 | $0.10 |
| 21,000+ | $0.10 | $0.10 |
| 30,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 50V.
It is available in a 6-SMD (5 leads) flat lead package, also known as SMini5-F3-B.
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum collector current (Ic) is 100mA.
The maximum power dissipation is 150mW.
The minimum DC current gain is 160 at Ic=5mA and Vce=10V.
Each transistor has a base resistor (R1) of 4.7kΩ.