| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
109 pcs
|
109 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Noise Figure (dB Typ @ f) | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The DMC506E20R is a dual NPN bipolar junction transistor designed for RF applications. It features a collector-emitter voltage rating of 20V and a collector current of 15mA, with a power dissipation of 150mW. The transistor offers a gain bandwidth product of 650MHz and a typical gain of 24dB at 100MHz. The DC current gain (hFE) is minimum 65 at 1mA collector current and 6V Vce. The noise figure is typically 3.3dB at 100MHz.
This transistor is suitable for low-power RF amplification and signal processing circuits. The dual NPN configuration allows for compact designs in differential or cascode amplifier stages.
The device is surface mountable and is available in a 6-TSSOP, SC-88, or SOT-363 package, with the supplier device package specified as SOT-363. The mounting type is surface mount.
Environmental compliance data indicates RoHS3 compliance and MSL level 1 (unlimited), though these are unverified. The part is also REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.08 | $0.08 |
| 6,000+ | $0.07 | $0.07 |
| 9,000+ | $0.07 | $0.07 |
| 15,000+ | $0.07 | $0.07 |
| 21,000+ | $0.06 | $0.06 |
| 30,000+ | $0.06 | $0.06 |
| 75,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
6-TSSOP, SC-88, or SOT-363, with SOT-363 as the supplier device package.
15mA.
650MHz.
150mW.
24dB.
3.3dB at 100MHz.