| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,759,020 pcs
|
1759020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMC3400SDW-7 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, combining an N-channel and a P-channel device in a single SOT-363 package. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications.
Key electrical characteristics include a drain-source voltage rating of 30V for both channels. The N-channel MOSFET supports a continuous drain current of 650mA with a maximum on-resistance of 400mΩ at VGS=10V and ID=590mA. The P-channel MOSFET supports a continuous drain current of 450mA with a maximum on-resistance of 900mΩ at VGS=-10V. The device features low input capacitance (55pF max at VDS=15V), low gate charge (1.4nC max at VGS=10V), and a gate threshold voltage of 1.6V max.
The device is housed in a surface-mount SOT-363 package (also known as 6-TSSOP or SC-88) with matte tin annealed terminals over a copper leadframe. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 310mW. The MOSFET features an ESD protected gate and is designed for fast switching.
This complementary pair configuration is well-suited for applications such as motor control, power management functions, and DC-DC converters, where both high-side and low-side switching are required in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.47 | $0.47 |
| 10+ | $0.32 | $0.32 |
| 100+ | $0.20 | $0.20 |
| 500+ | $0.16 | $0.16 |
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V for both the N-channel and P-channel MOSFETs.
The N-channel MOSFET supports 650mA and the P-channel supports 450mA continuous drain current.
The maximum on-resistance is 400mΩ at VGS=10V and ID=590mA.
The junction temperature range is -55°C to 150°C.
It is available in a surface-mount SOT-363 package (also known as 6-TSSOP or SC-88).
Yes, it is fully RoHS3 compliant per EU Directive 2015/863/EU.
The maximum power dissipation is 310mW.