| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
119,880 pcs
|
119880 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMC31D5UDJ-7 is a complementary pair of enhancement mode MOSFETs featuring both N-Channel (Q1) and P-Channel (Q2) devices in a single SOT-963 package. Each MOSFET is rated for a drain-source voltage of 30V, with continuous drain currents of 220mA (N-Channel) and 200mA (P-Channel) at 25°C. The device offers low on-resistance, with the N-Channel achieving 1.5Ω maximum at VGS=4.5V and the P-Channel 5Ω maximum at VGS=-4.5V. Both channels are specified with multiple RDS(on) conditions for low-voltage gate drive operation, making them suitable for logic-level applications. The gate threshold voltage is a maximum of 1V, enabling direct drive from 1.8V logic. Input capacitance is 22.6pF typical, and gate charge is 0.38nC, ensuring fast switching. The MOSFET includes an ESD protected gate. The device is rated for a power dissipation of 350mW and operates over a junction temperature range of -55°C to +150°C. The SOT-963 package is ultra-small (1mm x 1mm) and surface mountable, with a weight of 0.027g. The terminal finish is matte tin annealed over copper, solderable per MIL-STD-202. The device is fully RoHS compliant, lead-free, halogen and antimony free, and MSL Level 1. It is also qualified to AEC-Q101 standards for high reliability applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.78 | $0.78 |
| 10+ | $0.49 | $0.49 |
| 100+ | $0.31 | $0.31 |
| 500+ | $0.24 | $0.24 |
| 1,000+ | $0.19 | $0.19 |
| 10,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Both N-Channel and P-Channel MOSFETs are rated for 30V drain-source voltage.
The device is available in a SOT-963 surface mount package.
The junction temperature range is -55°C to +150°C.
Yes, the device is fully RoHS3 compliant and lead-free, with halogen and antimony free construction.
The N-Channel MOSFET (Q1) can handle up to 220 mA continuous drain current at 25°C.
Yes, it features an ESD protected gate.
The maximum gate threshold voltage is 1V at 250µA drain current for the N-Channel; the P-Channel is expected to be similar.