| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 1138+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs(th) (Max) @ Id |
The DMC3036LSD-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating both N-Channel and P-Channel MOSFETs in a single 8-SOIC package. This device is designed for high efficiency power management applications, offering low on-resistance and low input capacitance for superior switching performance.
The N-Channel MOSFET has a maximum drain-source voltage of 30V and a continuous drain current of 5A, with a maximum on-resistance of 36mΩ at VGS=10V. The P-Channel MOSFET has a maximum drain-source voltage of -30V and a continuous drain current of 4.5A, with a maximum on-resistance of 36mΩ at VGS=-10V. Both channels feature logic level gate drive, with a maximum gate threshold voltage of 2.1V.
The device is housed in a surface mount 8-SOIC package with matte tin termination finish. It is RoHS3 compliant, halogen-free, and lead-free, with an MSL rating of Level 1. The DMC3036LSD-13 is suitable for motor control, DC-DC converters, power management functions, and inverter applications.
The maximum drain-source voltage for the N-Channel MOSFET is 30V.
The maximum continuous drain current for the P-Channel MOSFET is 4.5A.
The operating junction temperature range is -55°C to 150°C.
The DMC3036LSD-13 is available in an 8-SOIC surface mount package.
Yes, the DMC3036LSD-13 is RoHS3 compliant.
The maximum on-resistance for the N-Channel MOSFET at VGS=10V is 36mΩ.
The maximum gate threshold voltage is 2.1V at ID=250µA.