DMC3036LSD-13 The DMC3036LSD-13 is a complementary N and P-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 5A continuous drain current (N-Channel), and low on-resistance down to 36mΩ.
Mfr Part #:

DMC3036LSD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMC3036LSD-13 is a complementary N and P-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 5A continuous drain current (N-Channel), and low on-resistance down to 36mΩ.
✓ Total Stock: 10,000 pcs

DMC3036LSD-13 Available from 1 distributor

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10,000 pcs
10000 pcs On Request 1 On Request On Request 1138+ On Request On Request

DMC3036LSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id

DMC3036LSD-13 Description

Short technical summary and product information.

The DMC3036LSD-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating both N-Channel and P-Channel MOSFETs in a single 8-SOIC package. This device is designed for high efficiency power management applications, offering low on-resistance and low input capacitance for superior switching performance.

 

The N-Channel MOSFET has a maximum drain-source voltage of 30V and a continuous drain current of 5A, with a maximum on-resistance of 36mΩ at VGS=10V. The P-Channel MOSFET has a maximum drain-source voltage of -30V and a continuous drain current of 4.5A, with a maximum on-resistance of 36mΩ at VGS=-10V. Both channels feature logic level gate drive, with a maximum gate threshold voltage of 2.1V.

 

The device is housed in a surface mount 8-SOIC package with matte tin termination finish. It is RoHS3 compliant, halogen-free, and lead-free, with an MSL rating of Level 1. The DMC3036LSD-13 is suitable for motor control, DC-DC converters, power management functions, and inverter applications.

DMC3036LSD-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMC3036LSD-13 Complementary N and P-Channel Enhancement Mode MOSFET
Subcategory: Complementary Pair MOSFET Array

DMC3036LSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

DMC3036LSD-13 Features

  • Complementary N and P-Channel MOSFET pair.
  • 30V drain-source voltage rating.
  • Low on-resistance of 36mΩ.
  • Logic level gate drive capability.
  • RoHS3 compliant and halogen-free.

DMC3036LSD-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in motor control applications.
  • Suitable for power management functions.
  • Applied in inverter designs.

DMC3036LSD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the N-Channel MOSFET?

The maximum drain-source voltage for the N-Channel MOSFET is 30V.

What is the maximum continuous drain current for the P-Channel MOSFET?

The maximum continuous drain current for the P-Channel MOSFET is 4.5A.

What is the operating temperature range of this device?

The operating junction temperature range is -55°C to 150°C.

What package type is the DMC3036LSD-13 available in?

The DMC3036LSD-13 is available in an 8-SOIC surface mount package.

Is the DMC3036LSD-13 RoHS compliant?

Yes, the DMC3036LSD-13 is RoHS3 compliant.

What is the maximum on-resistance for the N-Channel MOSFET at VGS=10V?

The maximum on-resistance for the N-Channel MOSFET at VGS=10V is 36mΩ.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 2.1V at ID=250µA.

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