| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
87,542 pcs
|
87542 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The DMC3035LSD-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating both N-Channel and P-Channel MOSFETs in a single SOP-8L package. The N-Channel MOSFET features a 30V drain-source voltage, continuous drain current of 6.9A at 25°C, and low on-resistance of 35mOhm at VGS=10V. The P-Channel MOSFET offers -30V drain-source voltage, -5A continuous drain current, and on-resistance of 65mOhm at VGS=-10V. Both channels support logic level gate drive with gate threshold voltages as low as 1V for N-Channel and -1V for P-Channel. The device has low input capacitance of 384pF and total gate charge of 8.6nC, enabling fast switching. It is housed in a green, RoHS compliant SOP-8L package and rated for operating temperatures from -55°C to 150°C. Designed for space-constrained applications requiring both N and P channel devices, it simplifies PCB layout and reduces component count.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.21 | $0.21 |
| 5,000+ | $0.19 | $0.19 |
| 7,500+ | $0.18 | $0.18 |
| 12,500+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
6.9A
-55°C to 150°C (junction)
Yes, it is lead-free by design and RoHS compliant.
SOP-8L
2W