| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,520 pcs
|
18520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17,500 pcs
|
17500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMC3028LSDX-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It integrates an N-channel and a P-channel MOSFET in a single SO-8 package, offering a 30V drain-source voltage rating for both devices. The N-channel MOSFET delivers a continuous drain current of 7.2A at +25°C, while the P-channel provides 7.6A. On-resistance is minimized with maximum values of 27mOhm (N-channel at Vgs=10V) and 25mOhm (P-channel at Vgs=-10V), with logic-level gate drive capability at 4.5V.
This MOSFET features low input capacitance (641pF) and low gate charge (13.2nC), enabling fast switching performance. It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, halogen and antimony free. The device is housed in a surface-mount SO-8 package with a green molding compound, rated MSL Level 1 per J-STD-020. Typical applications include DC-DC converters, power management functions, and backlighting circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
| 10+ | $0.75 | $0.75 |
| 100+ | $0.49 | $0.49 |
| 500+ | $0.38 | $0.38 |
| 1,000+ | $0.35 | $0.35 |
| 2,500+ | $0.30 | $0.30 |
| 5,000+ | $0.27 | $0.27 |
| 10,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V for the N-channel MOSFET (Q1) and -30V for the P-channel MOSFET (Q2).
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also referred to as SO-8.
The operating temperature range is -55°C to 150°C (junction and storage).
Yes, it is RoHS3 compliant as stated in the datasheet: 'Totally Lead-Free & Fully RoHS Compliant'.
The maximum drain current for the N-channel MOSFET (Q1) at TA=+25°C is 7.2A.
The maximum on-resistance for the P-channel MOSFET (Q2) at Vgs=-10V is 25mOhm.
Yes, it is qualified to AEC-Q101 standards for high reliability, though an automotive-specific datasheet exists separately.