| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The DMC3028LSD-13 is a complementary dual enhancement mode MOSFET from Diodes Incorporated, combining both N-channel and P-channel MOSFETs in a single SO-8 package. This device features a drain-source voltage rating of 30V and a maximum on-resistance of 28mΩ for the N-channel Q1 at 10V gate drive. The P-channel Q2 offers an on-resistance of 25mΩ at -10V gate drive.
Continuous drain current at 25°C is rated at 7.1A for Q1 and -7.4A for Q2, making it suitable for moderate power applications. The device also supports logic-level gate drive with specified operation at 4.5V gate-source voltage. Gate charge is 10.5nC maximum, enabling fast switching performance.
Typical applications include motor control, backlighting, DC-DC converters, and power management functions. The device is housed in a surface-mount SO-8 package with a Green molding compound and is RoHS compliant. Operating temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.54 | $0.54 |
| 100+ | $0.42 | $0.42 |
| 1,000+ | $0.31 | $0.31 |
| 2,500+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) is 30V for both the N-channel (Q1) and P-channel (Q2) MOSFETs.
At TA=25°C, the N-channel Q1 is rated for 7.1A and the P-channel Q2 for -7.4A continuous drain current.
For the N-channel Q1, the maximum RDS(on) is 28mΩ at VGS=10V and ID=6A. For the P-channel Q2, it is 25mΩ at VGS=-10V and ID=-7.4A.
The device is offered in an SO-8 surface mount package.
The junction temperature range is -55°C to +150°C.