| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Continuous Drain Current (Maximum @ Steady State, TA=+25 °C, VGS=10 V) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ ID=6 A, VGS=10 V) | |
| Gate Charge (Maximum @ VGS=4.5 V) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Input Capacitance (Maximum @ Vds=15 V) | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The DMC3026LSD-13 is a complementary pair enhancement mode MOSFET from Diodes Incorporated, integrating an N-channel and a P-channel MOSFET in a single 8-SOIC package. The N-channel device offers a minimum drain-source breakdown voltage of 30V and a maximum continuous drain current of 6.5A (steady state at 25°C), with a maximum on-resistance of 25mOhm at VGS=10V. The P-channel device provides a minimum breakdown voltage of -30V and a maximum continuous drain current of -6.2A, with a maximum on-resistance of 28mOhm at VGS=-10V.
This MOSFET is designed for high-efficiency power management applications, featuring low input capacitance (641pF for N-channel, 1241pF for P-channel at VDS=15V) and low gate charge (6nC for N-channel, 10.9nC for P-channel at VGS=4.5V) for fast switching performance. The device is housed in a surface-mount 8-SOIC package with a standard tape and reel packaging of 2500 pieces per reel.
The DMC3026LSD-13 is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant, lead-free, and halogen-free. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
| 10+ | $0.73 | $0.73 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.37 | $0.37 |
| 1,000+ | $0.34 | $0.34 |
| 2,500+ | $0.30 | $0.30 |
| 5,000+ | $0.26 | $0.26 |
| 10,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFET has a minimum drain-source breakdown voltage of 30V, and the P-channel MOSFET has a minimum of -30V.
The N-channel can handle up to 6.5A steady state at 25°C, and the P-channel up to -6.2A steady state at 25°C.
The N-channel has a maximum on-resistance of 25mOhm at VGS=10V and ID=6A. The P-channel has a maximum on-resistance of 28mOhm at VGS=-10V and ID=-6A.
It is supplied in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also referred to as 8-SO.
The junction operating temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 compliant and the datasheet states it is totally lead-free and fully RoHS compliant.
The maximum gate threshold voltage is 3V at a drain current of 250µA for both channels.