| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Avalanche Current (N-Channel) | |
| Configuration | |
| Continuous Drain Current (Maximum @ P-Channel, Steady State, TA=+25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (Maximum @ P-Channel) | |
| Drain-Source On-Resistance (@ N-Channel, VGS=10 V) | |
| Gate Charge (@ P-Channel, Vgs=4.5 V) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (@ Vds=25 V) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Maximum Continuous Body Diode Forward Current (N-Channel) | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Power | |
| Pulsed Drain Current (Maximum @ N-Channel, 10 µs pulse, duty cycle=1%) | |
| Pulsed Drain Current (Maximum @ P-Channel, 10 µs pulse, duty cycle=1%) | |
| Rds On (Max) @ Id, Vgs | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Terminal Finish | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMC3025LSDQ-13 is a 30V complementary enhancement mode MOSFET from Diodes Incorporated, integrating both N and P-Channel devices in a single SO-8 package. This device is designed for automotive and industrial applications requiring efficient switching and space-saving design.
Key electrical specifications include a maximum drain-source voltage of 30V for the N-Channel and -30V for the P-Channel. The N-Channel MOSFET offers a continuous drain current of 6.5A and a low on-resistance of 20mΩ at VGS=10V. The P-Channel MOSFET provides 5.5A continuous drain current with 45mΩ on-resistance at VGS=-10V. Both channels feature low input capacitance (501pF at Vds=15V) and fast switching characteristics.
The device is housed in a surface-mount SO-8 package with matte tin annealed over copper leadframe terminals. It is fully RoHS3 compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability. The operating temperature range spans -55°C to +150°C, making it suitable for harsh environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.24 | $1.24 |
| 10+ | $0.76 | $0.76 |
| 100+ | $0.47 | $0.47 |
| 500+ | $0.37 | $0.37 |
| 2,500+ | $0.37 | $0.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the N-Channel MOSFET is 30V.
The continuous drain current for the P-Channel MOSFET is 5.5A at TA=+25°C.
The DMC3025LSDQ-13 is available in an SO-8 (8-SOIC, 0.154" width) surface-mount package.
The operating temperature range is -55°C to +150°C (junction temperature).
Yes, the DMC3025LSDQ-13 is fully RoHS3 compliant (lead-free) per EU Directive 2002/95/EC and 2011/65/EU.