DMC2004DWK-7

The DMC2004DWK-7 is a complementary pair enhancement-mode MOSFET from Diodes Incorporated, integrating one N-channel and one P-channel transistor in a single SOT-363 package. Each channel is rated for a maximum drain-source voltage of 20V (N-channel) and -20V (P-channel), with a gate-source voltage rating of ±8V. The N-channel device can handle a continuous drain current of 540mA at 25°C, while the P-channel device is rated at 430mA.

On-resistance is specified as 550mΩ maximum at a drain current of 540mA and gate-source voltage of 4.5V. The gate threshold voltage is kept below 1V (tested at 250µA drain current), allowing logic-level gate drive. Input capacitance is 150pF maximum at Vds = 16V, and the device features ESD-protected gates for improved handling robustness.

The device is built with MOSFET (Metal Oxide) technology and is designed for fast switching with low on-resistance, low gate threshold, and low input capacitance. These characteristics make it suitable for battery-powered portable devices, load switching, and low-voltage power management applications where complementary N/P-channel pairs are needed. The logic-level gate threshold enables direct interfacing with low-voltage logic.

The DMC2004DWK-7 is housed in a surface-mount SOT-363 package (also known as 6-TSSOP or SC-88). The package is molded plastic with UL 94V-0 flammability rating, and the device is fully RoHS compliant and halogen- and antimony-free (green). It is rated for operation from -65°C to +150°C junction temperature, with a maximum power dissipation of 250mW and thermal resistance of 500°C/W when mounted on an FR-4 PCB. Moisture sensitivity level is 1 (unlimited floor life) per J-STD-020C.