| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
788 pcs
|
788 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DMA564050R is a dual PNP pre-biased transistor array manufactured by Panasonic Electronic Components. This device integrates two PNP transistors with built-in 10kΩ base resistors, simplifying circuit design by reducing external component count. Each transistor is rated for a collector-emitter breakdown voltage of 50V and a collector current of 100mA, with a power dissipation of 150mW.
The transistors offer a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 250mV at 500µA base current and 10mA collector current. These characteristics make the device suitable for low-power switching and signal amplification applications.
The DMA564050R is housed in a 6-SMD flat-lead package (SMini6-F3-B) and is designed for surface-mount assembly, making it suitable for compact PCB layouts in space-constrained designs. The pre-biased configuration eliminates the need for external bias resistors, reducing board space and component count in applications such as load switching, level shifting, and interface circuits.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.12 | $0.12 |
| 6,000+ | $0.11 | $0.11 |
| 9,000+ | $0.11 | $0.11 |
| 15,000+ | $0.10 | $0.10 |
| 21,000+ | $0.10 | $0.10 |
| 30,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 50V.
The collector current (Ic) rating is 100mA.
The device is available in a 6-SMD flat-lead package, specifically the SMini6-F3-B supplier device package.
The power dissipation (Pd) is 150mW.
The built-in base resistor (R1) is 10kΩ.
The minimum DC current gain (hFE) is 160, measured at 5mA collector current and 10V collector-emitter voltage.
The maximum collector-emitter saturation voltage (Vce(sat)) is 250mV, measured at 500µA base current and 10mA collector current.