| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,988 pcs
|
4988 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DMA501010R is a dual PNP bipolar junction transistor array designed for general-purpose switching and amplification. It integrates two matched PNP transistors in a compact surface mount package.
Electrical characteristics include a maximum collector-emitter breakdown voltage of 50V, maximum collector current of 100µA, and maximum power dissipation of 150mW. The transition frequency is 150MHz, and DC current gain (hFE) is minimum 210 at 2mA collector current and 10V Vce. Saturation voltage is 500mV maximum at 10mA base current and 100mA collector current.
The device is housed in a 5-SMD flat leads package with supplier device package SMini5-F3-B. It is designed for surface mount assembly and operates at junction temperatures up to 150°C.
This dual transistor array is suitable for applications requiring matched transistor pairs in a small footprint, such as differential amplifiers, current mirrors, and signal processing circuits.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.10 | $0.10 |
| 6,000+ | $0.09 | $0.09 |
| 9,000+ | $0.09 | $0.09 |
| 15,000+ | $0.08 | $0.08 |
| 21,000+ | $0.08 | $0.08 |
| 30,000+ | $0.08 | $0.08 |
| 75,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
5-SMD flat leads package with supplier device package SMini5-F3-B.
150°C.
RoHS3 compliant (unverified).
Minimum 210 at 2mA collector current and 10V Vce.
150 MHz.
Surface mount.