| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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42,500 pcs
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42500 pcs | On Request | 1 | On Request | On Request | 1637+ | On Request | On Request |
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| Gate Type | |
| High Side Voltage | |
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The Diodes Incorporated DGD21042S8-13 is a high-voltage, high-speed gate driver designed for driving N-channel MOSFETs and IGBTs in a half-bridge configuration. It supports a high-side driver operation up to 600V using bootstrap techniques.
This device offers a wide supply voltage range of 10V to 20V and provides a significant output current capability of 290mA source and 600mA sink. The operating temperature range is extended from -40°C to 150°C (TJ), making it suitable for demanding environments. The gate driver features non-inverting inputs and a synchronous channel type.
Packaged in an 8-SOIC surface-mount package, the DGD21042S8-13 is designed for ease of integration into various power management applications. Its specifications include logic voltage levels of 0.8V and 2.5V, and rise times of 70ns and 35ns. The driven configuration is half-bridge, and it supports IGBT and N-Channel MOSFET gate types.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 10V to 20V.
The package type is 8-SOIC with a width of 0.154 inches (3.90mm).
The operating temperature range is -40°C to 150°C (TJ).
Yes, it is RoHS3 Compliant.
The high-side voltage capability is 600V.
It has a 290mA source and 600mA sink output current capability.