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DGD2101S8-13 The Diodes Incorporated DGD2101S8-13 is a half-bridge gate driver IC designed for driving N-channel MOSFETs and IGBTs. It operates with a supply voltage of 10V to 20V and features a 600V high-side capability.
Mfr Part #:

DGD2101S8-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DGD2101S8-13 is a half-bridge gate driver IC designed for driving N-channel MOSFETs and IGBTs. It operates with a supply voltage of 10V to 20V and features a 600V high-side capability.
✓ Total Stock: 22,500 pcs
$ Price Range: $2.01

DGD2101S8-13 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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22,500 pcs
On Request
22500 pcs On Request 1 On Request On Request 1552+ On Request On Request
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DGD2101S8-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
High Side Voltage
Input Type
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Supplier Package
Voltage
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DGD2101S8-13 Description

Short technical summary and product information.

The Diodes Incorporated DGD2101S8-13 is a high-voltage, high-speed gate driver IC capable of driving N-channel MOSFETs and IGBTs in a high-side/low-side configuration. It utilizes high-voltage processing techniques, enabling its high side to switch up to 600V in bootstrap operation. The driver features a propagation delay matching of 50ns (max) between the high and low sides, facilitating high-frequency switching.

 

Key electrical specifications include a wide supply voltage range of 10V to 20V, logic input compatibility down to 3.3V (TTL and CMOS levels), and output currents of 290mA (source) and 600mA (sink). The device offers independent channel control and non-inverting input type.

 

Packaged in a space-saving 8-SOIC (0.154", 3.90mm Width) surface-mount package, the DGD2101S8-13 operates within an extended temperature range of -40°C to 150°C (TJ). Its robust design includes outputs tolerant to negative transients and undervoltage lockout for VCC, making it suitable for applications such as DC-DC converters, DC-AC inverters, AC-DC power supplies, motor controls, and Class D power amplifiers.

DGD2101S8-13 Quick Information

Product Type: Gate Driver
Canonical Name: Diodes Incorporated DGD2101S8-13 Half-Bridge Gate Driver
Subcategory: Power Management (PMIC)

DGD2101S8-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DGD2101S8-13 Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

DGD2101S8-13 Features

  • Drives N-channel MOSFETs and IGBTs.
  • 600V high-side switching capability.
  • 10V to 20V supply voltage range.
  • Independent high-side and low-side drivers.
  • 8-SOIC surface-mount package.

DGD2101S8-13 Applications

  • Suitable for DC-DC converters.
  • Used in DC-AC inverters.
  • Applicable to AC-DC power supplies.
  • Designed for motor control circuits.
  • Ideal for Class D amplifiers.

DGD2101S8-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range for the DGD2101S8-13?

The operating voltage supply range is 10V to 20V.

What package type is the DGD2101S8-13 available in?

The DGD2101S8-13 is available in an 8-SOIC package.

What is the operating temperature range for this gate driver?

The operating temperature range is -40°C to 150°C (TJ).

Is the DGD2101S8-13 RoHS compliant?

Yes, it is RoHS3 Compliant.

How many drivers does the DGD2101S8-13 have?

It has 2 independent drivers.

What types of gates can the DGD2101S8-13 drive?

It can drive IGBT and N-Channel MOSFET gates.

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