DGD2101MS8-13

The DGD2101MS8-13 from Diodes Incorporated is a high-voltage, high-speed gate driver designed for driving N-Channel MOSFETs and IGBTs in both high-side and low-side configurations. It utilizes high-voltage processing techniques, enabling its high side to switch up to 600V in bootstrap operation. The driver features a propagation delay matching of 50ns (max) between high and low sides, facilitating high-frequency switching.

This device is compatible with standard TTL and CMOS logic levels down to 3.3V for easy integration with control systems. The outputs are designed with high-pulse current buffers to minimize driver cross-conduction. The low-side gate driver and logic share a common ground.

Key electrical specifications include a wide supply voltage range of 10V to 20V for the low-side gate driver and logic. It supports a high-side voltage of up to 600V. The operating temperature range extends from -40°C to +125°C (TA).

The DGD2101MS8-13 is housed in a space-saving 8-SOIC package (0.154", 3.90mm width) and is suitable for surface mount applications. It is designed for applications such as DC-DC converters, DC-AC inverters, AC-DC power supplies, motor controls, and Class D power amplifiers.