DGD1503S8-13 The Diodes Incorporated DGD1503S8-13 is a half-bridge gate driver designed for N-channel MOSFETs and IGBTs. It offers high-voltage operation and robust current capabilities.
Mfr Part #:

DGD1503S8-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated DGD1503S8-13 is a half-bridge gate driver designed for N-channel MOSFETs and IGBTs. It offers high-voltage operation and robust current capabilities.
Total Stock: 115,782 pcs
$ Price Range: $2.01

DGD1503S8-13 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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115,782 pcs
115782 pcs On Request 1 On Request On Request 2018+ On Request On Request

DGD1503S8-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Current
Driven Configuration
Gate Type
Halogen Free
High Side Voltage
Input Type
Logic Voltage
Mounting Type
Number of Drivers
Operating Temperature
Rise
Supplier Device Package
Voltage

DGD1503S8-13 Description

Short technical summary and product information.

The DGD1503S8-13 from Diodes Incorporated is a high-voltage, high-speed gate driver suitable for half-bridge configurations. It is capable of driving N-channel MOSFETs and IGBTs, with a high-side driver operating up to 250V in bootstrap mode. The device features a fixed internal dead time of 430ns to protect the MOSFETs and provides 290mA source and 600mA sink current capability.

 

This gate driver operates over an extended temperature range of -40°C to +125°C and is available in an 8-SOIC package. Its logic inputs are compatible with 3.3V TTL and CMOS levels, and it includes undervoltage lockout for the VCC supply. The DGD1503S8-13 is designed for applications such as DC-DC converters, DC-AC inverters, power supplies, and motor controls.

 

Key electrical specifications include a wide low-side gate driver supply voltage range of 10V to 20V. The outputs are tolerant to negative transients, and the logic inputs feature Schmitt triggering. The component is also noted as being totally lead-free, fully RoHS 3 compliant, and halogen and antimony-free.

 

Mechanical details include an 8-SO (Type TH) package made from molded plastic with a UL Flammability Classification Rating of 94V-0. The terminals have a matte tin plated finish, solderable per MIL-STD-202, Method 208. The approximate weight is 0.075 grams.

DGD1503S8-13 Quick Information

Product Type: Gate Driver
Canonical Name: DGD1503 Half-Bridge Gate Driver
Subcategory: Gate Drivers

DGD1503S8-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DGD1503S8-13 Estimated Pricing

Qty Low High
1+ $2.01 $2.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

DGD1503S8-13 Features

  • Drives N-channel MOSFETs or IGBTs.
  • High-side driver up to 250V.
  • 290mA source/600mA sink current.
  • Internal dead time of 430ns.
  • Operates -40°C to 125°C.

DGD1503S8-13 Applications

  • Used in DC-DC converters.
  • Suitable for DC-AC inverters.
  • Applied in AC-DC power supplies.
  • Designed for motor controls.
  • Applicable to Class D amplifiers.

DGD1503S8-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the DGD1503S8-13?

The gate driver supply voltage ranges from 10V to 20V.

What is the package type of the DGD1503S8-13?

The device is available in an 8-SO surface-mount package (8-SOIC, 0.154" width).

What is the operating temperature range?

-40°C to 150°C (junction temperature).

What is the high-side voltage rating?

The high-side voltage is 250V in bootstrap operation.

What output current can the driver provide?

It provides 290mA source and 600mA sink output current.

Does the driver have internal dead time?

Yes, the typical internal dead time is 430ns.

What configuration is the DGD1503S8-13 designed for?

It is a half-bridge driver for N-channel MOSFETs.

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