DG636EEN-T1-GE4 The Vishay DG636EEN-T1-GE4 is a dual SPDT analog switch IC designed for precision signal switching. It offers low charge injection and operates across a wide voltage range.
Mfr Part #:

DG636EEN-T1-GE4

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay DG636EEN-T1-GE4 is a dual SPDT analog switch IC designed for precision signal switching. It offers low charge injection and operates across a wide voltage range.
Total Stock: 51,660 pcs

DG636EEN-T1-GE4 Available from 2 distributors

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51,657 pcs
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DG636EEN-T1-GE4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Bandwidth
Channel
Channel Capacitance (CS(off), CD(off))
Charge Injection
Crosstalk
Current
Isolation
Mounting Style
Mounting Type
Multiplexer
Number of Circuits
On
Operating Temperature
Power Dissipation
Storage Temperature
Supplier Device Package
Supply Current
Switch Circuit
Switch Time (Ton, Toff) (Max)
Tape & Reel
Voltage

DG636EEN-T1-GE4 Description

Short technical summary and product information.

The Vishay DG636EEN-T1-GE4 is a dual Single Pole Double Throw (SPDT) analog switch IC. It is designed for applications requiring precise signal switching, such as data acquisition systems and analog front ends.

 

This device offers ultralow charge injection, typically less than ±0.3 pC, and low leakage currents. It features a -3 dB bandwidth of 700 MHz, making it suitable for high-frequency signals. The switch conducts equally well in both directions when on and blocks input voltages up to the supply level when off, exhibiting break-before-make switching action.

 

The DG636EEN-T1-GE4 supports single supply operation from +3 V to +16 V or dual supplies from ±3 V to ±8 V. It is fully specified at +3 V, +5 V, and ±5 V. Control logic inputs are CMOS/TTL compatible.

 

Packaged in a 16-miniQFN (1.8x2.6 mm) or 16-UFQFN, this surface-mount component is designed for efficient integration into compact electronic designs. It operates within a temperature range of -40 °C to +125 °C.

DG636EEN-T1-GE4 Quick Information

Product Type: Analog Switch IC
Canonical Name: DG636E Dual SPDT Analog Switch
Subcategory: Switch ICs

DG636EEN-T1-GE4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DG636EEN-T1-GE4 Features

  • Ultralow charge injection (< ±0.3 pC).
  • 700 MHz bandwidth for signal integrity.
  • Operates on single or dual supplies.
  • Low leakage current at 25 °C.
  • Surface mount 16-miniQFN package.

DG636EEN-T1-GE4 Applications

  • Ideal for data acquisition systems.
  • Used in analog front-end designs.
  • Suitable for sample and hold circuits.
  • Effective for precision instrument applications.
  • Applicable in communications systems.

DG636EEN-T1-GE4 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating supply voltage range for the DG636EEN-T1-GE4?

The DG636EEN-T1-GE4 operates from a +3 V to +16 V single supply or ±3 V to ±8 V dual supplies.

What package type is the DG636EEN-T1-GE4 available in?

The DG636EEN-T1-GE4 is available in a 16-miniQFN (1.8x2.6 mm) or 16-UFQFN package.

What is the operating temperature range for this analog switch IC?

The operating temperature range is -40 °C to +125 °C.

Is the DG636EEN-T1-GE4 RoHS compliant?

Yes, the DG636EEN-T1-GE4 is RoHS3 Compliant.

What is the typical charge injection for the DG636EEN-T1-GE4?

The typical charge injection is less than ±0.3 pC over the full analog signal range.

What is the bandwidth of the DG636EEN-T1-GE4?

The device has a -3 dB bandwidth of 700 MHz.

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