| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | 2120 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Bandwidth | |
| Channel | |
| Channel Capacitance (CS(off), CD(off)) | |
| Charge Injection | |
| Crosstalk | |
| Current | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Multiplexer | |
| Number of Circuits | |
| On | |
| Operating Temperature | |
| Operating Voltage | |
| Supplier Device Package | |
| Supplier Package | |
| Switch Circuit | |
| Switch Time (Ton, Toff) (Max) | |
| Voltage |
The Vishay DG612EEQ-T1-GE4 is an analog switch IC featuring four independently selectable SPST-NO switches. It is designed for operation with dual supplies ranging from ±3V to ±5V. Key electrical characteristics include a low charge injection of 1.4 pC, a typical channel capacitance of 3 pF, and a fast switching time of 50 ns on and 35 ns off.
This device boasts a 1 GHz 3 dB bandwidth and excellent isolation performance. The on-resistance is specified at a maximum of 115 Ohms, with a typical value of 600 mOhm. Leakage current is kept low at 100 pA.
The DG612EEQ-T1-GE4 operates within a temperature range of -40°C to 125°C. It is supplied in a 16-TSSOP package, suitable for surface mount applications.
Ideal for precision instrumentation, high-end data acquisition, and high-speed communication systems, this analog switch IC provides reliable performance in demanding applications.
The DG612EEQ-T1-GE4 operates with dual supplies from ±3V to ±5V.
The operating temperature range is -40°C to 125°C.
The DG612EEQ-T1-GE4 is supplied in a 16-TSSOP package.
The device has a 3 dB bandwidth of 1 GHz.
The charge injection is 1.4 pC.
The on-resistance is a maximum of 115 Ohm.