BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DG182AP by SIL is an analog gate designed with N-channel junction-type field-effect transistors (JFET) functioning as electronic switches. It is suitable for applications requiring high-speed switching with break-before-make action.
Key electrical characteristics include a constant ON-resistance of 75 Ohms for signals up to ±10V, and a maximum leakage current of less than 2nA from the signal channel in both ON and OFF states. The device supports ±15V power supplies and can block voltages up to 20V peak-to-peak in the OFF condition. Input control signals range from 0.8V to 2V, enabling direct compatibility with TTL, DTL, and RTL logic levels.
With switch-off input-output isolation exceeding 50dB at 10MHz, and cross-talk and open switch isolation also greater than 50dB at 10MHz with a 75 Ohm load, the DG182AP is well-suited for signal routing and switching applications where signal integrity is critical.
The DG182AP is supplied in a 14-Lead SBDIP package, designed for surface mounting.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DG182AP has a maximum ON-resistance of 75 Ohms for signals up to ±10V.
The DG182AP operates with ±15V power supplies.
The leakage current from the signal channel in both ON and OFF states is less than 2nA.
The DG182AP offers switch-off input-output isolation greater than 50dB at 10MHz, and cross-talk and open switch isolation greater than 50dB at 10MHz with a 75 Ohm load.
The turn-on and turn-off times for the DG182AP are less than 150ns.
The DG182AP is available in a 14-Lead SBDIP package.