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516,571 pcs
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516571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba DF5A6.8FU is an epitaxial planar diode designed exclusively for protection against electrostatic discharge (ESD). This component is not intended for other applications, such as constant voltage diode functions.
Key electrical characteristics include a Zener voltage of 6.8V at 5mA, a dynamic impedance of 25Ω maximum at 5mA, and a reverse current of 0.5μA maximum at 5V. The terminal capacitance is typically 45pF at 0V and 1MHz. The device boasts a high ESD immunity level, capable of withstanding ±30kV contact discharge according to IEC61000-4-2.
With a power dissipation rating of 200mW at 25°C, a junction temperature of 125°C, and a storage temperature range of -55°C to 125°C, the DF5A6.8FU is suitable for various operating environments. The mounting of four devices on an ultra-compact package helps reduce part count and mounting costs in system designs.
This product is intended for use solely as protection against ESD. It is crucial to design systems with appropriate reliability considerations, adhering to Toshiba's guidelines for semiconductor device handling and reliability.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
6.8V typical at 5mA test current.
200mW at 25°C ambient.
±30kV contact discharge per IEC61000-4-2.
45pF at 0V bias, 1MHz.
125°C.
0.5μA maximum.
-55°C to 125°C.