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39,000 pcs
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39000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba DF3A5.6FU(TE85L,F) is a dual-channel ESD protection diode array based on Zener technology, specifically designed to protect against electrostatic discharge events. It features a reverse standoff voltage of 2.5V and a typical breakdown voltage of 5.6V (5.3V to 6.0V range at 5mA). The device offers ±30kV contact discharge ESD immunity per IEC61000-4-2, ensuring robust protection for sensitive electronic circuits.
With a typical capacitance of 65pF at 1MHz, this diode array is well-suited for high-speed data lines where signal integrity must be maintained. The maximum reverse leakage current is only 1.0µA at 2.5V, minimizing power loss. Dynamic impedance is typically 40Ω maximum at 5mA, providing stable clamping behavior during ESD events.
Each channel is unidirectional, and the device is rated for a maximum power dissipation of 100mW at 25°C ambient temperature. The junction temperature can reach up to 125°C, and storage temperature range is -55°C to 125°C. The ultra-compact SC-70 (SOT-323) package and surface mount design enable integration into space-constrained PCB layouts, with a typical weight of 0.006g.
This product is intended solely for ESD protection and should not be used as a constant voltage reference diode. It is RoHS3 compliant and REACH unaffected, with MSL Level 1.
The reverse standoff voltage is 2.5V.
The breakdown voltage is 5.3V min, 5.6V typical, and 6.0V max at a test current of 5mA.
It is available in SC-70 (SOT-323) surface mount package with supplier device package USM.
It offers ±30kV contact discharge ESD immunity per IEC61000-4-2, with no damage to device elements.
Typical capacitance is 65pF at VR=0V and f=1MHz.
Maximum reverse leakage current is 1.0µA at VR=2.5V.
It has 2 unidirectional channels.