| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,205,000 pcs
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1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| ESD Contact Voltage | |
| Junction Temperature | |
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| Power Line Protection | |
| Reverse Leakage Current | |
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| Working Peak Reverse Voltage |
The Toshiba DF2S6.2CT,L3F is a silicon epitaxial planar ESD protection diode designed for general purpose ESD protection. It features a working peak reverse voltage of 5V and a breakdown voltage range of 5.8V to 6.6V at 5 mA. The device provides robust ESD protection with a typical contact discharge voltage of ±30kV per IEC61000-4-2.
With a low dynamic impedance of 30Ω and a reverse leakage current of only 2.5µA at 5V, this diode minimizes signal distortion and power loss. Its typical capacitance of 32pF at 0V makes it suitable for high-speed data lines without significant signal degradation.
The DF2S6.2CT,L3F is housed in a compact SOD-882 (CST2) surface mount package, enabling space-efficient PCB designs. It is RoHS3 and REACH compliant and is intended for ESD protection applications only, not for voltage regulation.
5V.
5.8V to 6.6V at 5 mA.
SOD-882 (CST2) surface mount package.
±30kV per IEC61000-4-2.
32pF at 0V, 1MHz.
2.5µA at 5V.
30Ω at 5 mA.