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550 pcs
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550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS DE275-102N06A is an N-Channel RF MOSFET designed for high-power RF applications. It features a drain-source voltage rating of 1000V, a continuous drain current of 8A, and a power dissipation capability of 590W. The device is housed in a 6-SMD, flat lead exposed pad package (DE275) suitable for surface mount assembly.
This MOSFET is intended for use in RF power amplifiers, RF generators, and other high-frequency switching circuits where high voltage and moderate current handling are required. The DE275 package provides excellent thermal performance through its exposed pad, enabling efficient heat dissipation in demanding applications.
Key specifications include a 1000V drain-source breakdown voltage, 8A continuous drain current, and 590W maximum power dissipation. The N-Channel enhancement-mode design allows for simple gate drive requirements typical of power MOSFETs.
The drain-source voltage rating is 1000V.
The maximum continuous drain current is 8A.
The maximum power dissipation is 590W.
It uses a 6-SMD, flat lead exposed pad package, also known as DE275.
The part is marked as RoHS3 compliant, but this is unverified.