| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
410 pcs
|
410 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The DE150-501N04A is an N-Channel RF MOSFET from IXYS designed for high-frequency and high-voltage applications. It features a drain-source voltage rating of 500V and a continuous drain current of 4.5A. The device can dissipate up to 200W of power, making it suitable for demanding RF amplifier and switching circuits. The part is housed in a 6-SMD, Flat Lead Exposed Pad package with a DE150 supplier device package designation, supporting surface mount assembly. The technology is MOSFET with a channel type of N-Channel. This component is intended for use in RF power amplifiers, high-voltage switching power supplies, and other industrial applications requiring robust performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $49.94 | $49.94 |
| 10+ | $40.98 | $40.98 |
| 40+ | $37.79 | $37.79 |
| 120+ | $36.02 | $36.02 |
| 280+ | $34.98 | $34.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The package is 6-SMD, Flat Lead Exposed Pad, with a supplier device package of DE150.
According to available data, the part is RoHS3 compliant. This status is unverified; please confirm with the manufacturer.
The drain-source voltage rating is 500V.
The continuous drain current is 4.5A.
The power dissipation is 200W.
The channel type is N-Channel.