DDTD123EC-7-F DDTD123EC-7-F is an NPN pre-biased transistor from Diodes Incorporated rated for 50V and 500mA with integrated 2.2kΩ resistors.
Mfr Part #:

DDTD123EC-7-F

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DDTD123EC-7-F is an NPN pre-biased transistor from Diodes Incorporated rated for 50V and 500mA with integrated 2.2kΩ resistors.
✓ Total Stock: 55,020 pcs
$ Price Range: $0.05 - $0.31

DDTD123EC-7-F Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,020 pcs
40020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request On Request

DDTD123EC-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Power
Resistor
Storage Temperature
Supplier Device Package
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DDTD123EC-7-F Description

Short technical summary and product information.

The DDTD123EC-7-F is an NPN pre-biased transistor featuring epitaxial planar die construction with built-in biasing resistors R1 = R2 = 2.2kΩ. It offers a collector-emitter voltage rating of 50V, a continuous collector current of 500mA, and a power dissipation of 200mW.

 

With a transition frequency of 200MHz, this device is suitable for switching and amplification applications. The DC current gain is a minimum of 39 at 50mA collector current and 5V collector-emitter voltage, and the saturation voltage is 300mV maximum at 2.5mA base current and 50mA collector current.

 

The transistor is housed in a surface-mount SOT23-3 package and is supplied in 7-inch reels with 8mm tape width, 3000 pieces per reel. It is fully RoHS3 compliant, lead-free, halogen and antimony free, with a moisture sensitivity level of 1 per J-STD-020.

DDTD123EC-7-F Quick Information

Product Type: Transistor - Bipolar (BJT) - Single, Pre-Biased
Series: DDTD123
Canonical Name: DDTD123EC-7-F NPN Pre-Biased Transistor
Subcategory: Pre-Biased BJT

DDTD123EC-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Yes

DDTD123EC-7-F Estimated Pricing

Qty Low High
1+ $0.31 $0.31
10+ $0.19 $0.19
25+ $0.15 $0.15
50+ $0.13 $0.13
100+ $0.12 $0.12
3,000+ $0.06 $0.06
9,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DDTD123EC-7-F Features

  • NPN pre-biased transistor with 2.2kΩ resistors.
  • Rated for 50V collector-emitter voltage.
  • Continuous collector current up to 500mA.
  • 200mW power dissipation in SOT23-3 package.
  • 200MHz transition frequency for switching applications.

DDTD123EC-7-F Applications

  • Ideal for switching and amplification circuits.
  • Used in consumer and industrial electronics.
  • Suitable for portable and battery-operated devices.
  • Applicable for signal conditioning and driver stages.

DDTD123EC-7-F FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of DDTD123EC-7-F?

The maximum collector-emitter voltage is 50V.

What are the built-in resistor values for this transistor?

Both base resistor R1 and base-emitter resistor R2 are 2.2kΩ each.

What is the package type of DDTD123EC-7-F?

It comes in a SOT23-3 surface-mount package (also referred to as TO-236-3 or SC-59).

Is the DDTD123EC-7-F RoHS compliant?

Yes, it is fully RoHS3 compliant (EU Directives 2002/95/EC, 2011/65/EU, and 2015/863/EU).

What is the moisture sensitivity level for this transistor?

It is MSL Level 1 per J-STD-020.

What is the DC current gain (hFE) of DDTD123EC-7-F?

The minimum DC current gain is 39 at Ic=50mA and Vce=5V.

What is the saturation voltage of this transistor?

The maximum Vce saturation is 300mV at Ib=2.5mA and Ic=50mA.

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