| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 1617+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Resistor | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The DDTA114YLP-7 is a PNP pre-biased small signal transistor from Diodes Incorporated, designed for automated surface mount assembly. It features built-in bias resistors R1=10kΩ and R2=47kΩ, eliminating the need for external resistors in switching applications. The device offers a maximum collector-emitter breakdown voltage of 50V, continuous collector current of 100mA, and power dissipation of 250mW. It is housed in the ultra-compact X1-DFN1006-3 leadless package, weighing only 0.0009 grams, making it ideal for space-constrained designs. The transistor is fully RoHS compliant and halogen-free, with a moisture sensitivity level of 1. It is qualified to AEC-Q101 standards for automotive applications. The DDTA114YLP-7 is suitable for a variety of switching and inverter circuits where space and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.66 | $0.66 |
| 10+ | $0.41 | $0.41 |
| 25+ | $0.34 | $0.34 |
| 50+ | $0.30 | $0.30 |
| 100+ | $0.26 | $0.26 |
| 3,000+ | $0.15 | $0.15 |
| 9,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 50V.
The package is X1-DFN1006-3, a surface mount leadless package.
The operating temperature range is -55°C to +150°C.
Yes, it is fully RoHS compliant and lead-free.
The maximum continuous collector current is 100mA.
R1 (base resistor) is 10kΩ and R2 (base-emitter resistor) is 47kΩ.
The maximum power dissipation is 250mW.