DCX56-16-13 The DCX56-16-13 is an NPN bipolar junction transistor from Diodes Incorporated. It features a collector-emitter breakdown voltage of 80V, a collector current rating of 1A, and a power dissipation of 1W in a surface-mount SOT89-3 package.
Mfr Part #:

DCX56-16-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DCX56-16-13 is an NPN bipolar junction transistor from Diodes Incorporated. It features a collector-emitter breakdown voltage of 80V, a collector current rating of 1A, and a power dissipation of 1W in a surface-mount SOT89-3 package.
Total Stock: 500 pcs
$ Price Range: $0.11 - $0.14

DCX56-16-13 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
500 pcs
500 pcs On Request 1 On Request On Request 24+ On Request On Request

DCX56-16-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Turn-On Voltage
Case Material
Collector-Base Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Mounting Type
Operating Temperature
Output Capacitance
Peak Pulse Current
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Finish
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight
hFE (Minimum/Maximum @ IC=150 mA, VCE=2 V)

DCX56-16-13 Description

Short technical summary and product information.

The DCX56-16-13 is an NPN epitaxial planar transistor designed for medium power switching and amplification applications. It is housed in a surface-mount SOT89-3 package (TO-243AA) with a molded plastic case rated UL 94V-0 and matte tin plated terminals.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage (V(BR)CEO) of 80V, a minimum collector-base breakdown voltage (V(BR)CBO) of 100V, and a continuous collector current (IC) rating of 1A with a peak pulse current (ICM) of 1.5A. The DC current gain (hFE) ranges from 100 to 250 at 150mA, 2V, and the device offers a typical current gain-bandwidth product (fT) of 200MHz.

 

The transistor has a power dissipation of 1W at 25°C ambient temperature and an operating junction temperature range of -55°C to +150°C. It is RoHS compliant and lead-free by design, with an MSL rating of Level 1.

DCX56-16-13 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: DCX56
Canonical Name: DCX56-16-13 NPN Bipolar Junction Transistor
Subcategory: Single BJT

DCX56-16-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DCX56-16-13 Estimated Pricing

Qty Low High
2,500+ $0.14 $0.14
5,000+ $0.13 $0.13
7,500+ $0.12 $0.12
12,500+ $0.12 $0.12
17,500+ $0.11 $0.11
25,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

DCX56-16-13 Features

  • NPN epitaxial planar die construction.
  • 80V collector-emitter breakdown voltage.
  • 1A continuous collector current rating.
  • Surface mount SOT89-3 (TO-243AA) package.
  • RoHS compliant and lead-free by design.

DCX56-16-13 Applications

  • Medium power switching circuits.
  • General purpose amplification stages.
  • Automated assembly processes.
  • Medium power driver applications.

DCX56-16-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DCX56-16-13?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 80V.

What is the maximum collector current rating?

The continuous collector current (IC) is rated at 1A, with a peak pulse current (ICM) of 1.5A.

What package is the DCX56-16-13 available in?

It is available in a surface-mount SOT89-3 package, also known as TO-243AA.

What is the operating temperature range?

The operating junction temperature range (Tj) is -55°C to +150°C.

Is the DCX56-16-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free by design.

What is the DC current gain (hFE) of this transistor?

The DC current gain (hFE) ranges from 100 to 250 at IC=150mA and VCE=2V.

What is the power dissipation rating?

The power dissipation (PD) is 1W at an ambient temperature of 25°C.

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