DCX51-13 DCX51-13 is a PNP bipolar junction transistor from Diodes Incorporated. It features a collector-emitter breakdown voltage of -45V, continuous collector current of -1A, and a current gain-bandwidth product of 200 MHz.
Mfr Part #:

DCX51-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DCX51-13 is a PNP bipolar junction transistor from Diodes Incorporated. It features a collector-emitter breakdown voltage of -45V, continuous collector current of -1A, and a current gain-bandwidth product of 200 MHz.
Total Stock: 2,877 pcs
$ Price Range: $0.11 - $0.14

DCX51-13 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,877 pcs
2877 pcs On Request 1 On Request On Request 1648+ On Request On Request

DCX51-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Turn-On Voltage (Max) @ Ic, Vce
Case Material
Collector Current
Collector Cut-off Current (Maximum @ VCB = -30 V, IE = 0, TA = 150 °C)
Collector Cut-off Current (Maximum @ VCB = -30 V, IE = 0, TA = 25 °C)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage (Max) @ Ib, Ic
Current
Current Gain-Bandwidth Product (Typ) @ Ic, Vce
DC Current Gain (Minimum @ IC=5 mA, VCE=2 V)
DC Current Gain (Minimum @ IC=500 mA, VCE=2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (Max) @ Veb
Emitter-Base Breakdown Voltage
Frequency
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (Max) @ Vcb, f
Peak Collector Current
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Tape & Reel
Terminal Finish
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

DCX51-13 Description

Short technical summary and product information.

The DCX51-13 is a PNP surface mount transistor manufactured by Diodes Incorporated using an epitaxial planar die construction. It is designed for medium power switching and amplification applications.

 

Key electrical characteristics include a collector-emitter breakdown voltage of -45V, continuous collector current rating of -1A, and a peak pulse current capability of -1.5A. The device offers a DC current gain (hFE) of 63 minimum at -5mA and -2V, and 40 minimum at -500mA and -2V. The current gain-bandwidth product is typically 200 MHz at -50mA and -5V.

 

The transistor is housed in a SOT89-3L surface mount package with matte tin annealed over copper leadframe terminals. The package is molded plastic with UL 94V-0 flammability rating. Thermal resistance from junction to ambient is 125°C/W when mounted on FR-4 PCB, with a maximum power dissipation of 1W at 25°C ambient.

DCX51-13 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: DCX51-13 PNP Surface Mount Transistor
Subcategory: PNP Single

DCX51-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DCX51-13 Estimated Pricing

Qty Low High
2,500+ $0.14 $0.14
5,000+ $0.13 $0.13
7,500+ $0.12 $0.12
12,500+ $0.12 $0.12
17,500+ $0.11 $0.11
25,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

DCX51-13 Features

  • PNP epitaxial planar die construction.
  • Collector-emitter breakdown voltage of -45V.
  • Continuous collector current rating of -1A.
  • Current gain-bandwidth product of 200 MHz.
  • Surface mount SOT89-3L package.

DCX51-13 Applications

  • Medium power switching circuits.
  • Linear amplification stages.
  • Automated assembly processes.
  • General purpose driver applications.

DCX51-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the DCX51-13?

The DCX51-13 is housed in a SOT89-3L surface mount package (SOT-89-3).

What is the operating temperature range of the DCX51-13?

The operating and storage temperature range is -55°C to +150°C.

Is the DCX51-13 RoHS compliant?

Yes, the DCX51-13 is RoHS compliant and lead-free by design.

What is the maximum collector current for the DCX51-13?

The maximum continuous collector current is -1A, with a peak pulse current rating of -1.5A.

What is the DC current gain (hFE) of the DCX51-13?

The minimum DC current gain is 63 at IC = -5mA, VCE = -2V and 40 at IC = -500mA, VCE = -2V.

What is the collector-emitter saturation voltage of the DCX51-13?

The maximum collector-emitter saturation voltage is -0.5V at IC = -500mA, IB = -50mA.

Does the DCX51-13 have a complementary NPN type?

Yes, the complementary NPN type is the DCX54 from Diodes Incorporated.

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