DCP69-16-13

The DCP69-16-13 is a PNP medium power bipolar junction transistor from Diodes Incorporated. It is designed for medium power switching and amplification applications. The transistor features a maximum collector-emitter voltage (VCEO) of -20V and a continuous collector current (IC) rating of -1A, with peak pulse current capability up to -2A. DC current gain (hFE) is a minimum of 100 at 500mA collector current, and the collector-emitter saturation voltage (VCE(sat)) is 500mV maximum at 1A. The transition frequency (ft) is 200 MHz, making it suitable for moderate frequency circuits.

The device is housed in a surface-mount SOT223 package (SOT-223-3), which is ideal for automated assembly processes. The package is molded from green plastic compound and features matte tin terminal finishes. Thermal characteristics include a power dissipation of 1W (Note 5) or 2W (Note 6) depending on mounting conditions, with corresponding junction-to-ambient thermal resistance of 125°C/W and 62.5°C/W. The operating junction temperature range is -55°C to 150°C. The DCP69-16-13 is fully RoHS3 compliant, lead-free, and halogen and antimony-free. It has an ESD HBM rating of 4000V (Class 3A). A complementary NPN type, DCP68, is available.