| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The DB3 from ON Semiconductor is a bi-directional trigger diode (DIAC) designed for triggering triacs and thyristors in AC phase control circuits. It features a typical breakover voltage (VBO) of 32V, with a range of 28V to 36V, and a breakover voltage symmetry of ±3V. The device has a low breakover current of 100µA maximum and a leakage current of 10µA maximum at half the maximum VBO.
With a power dissipation rating of 150mW and a repetitive peak forward current of 2A, the DB3 is suitable for low-power trigger applications. The dynamic breakover voltage is a minimum of 5V from IBO to 10mA forward current. The output voltage is 5V minimum as per test circuit diagram 1.
The DB3 is housed in a DO-35 (DO-204AH) through-hole package with axial leads, suitable for wave soldering. It operates over a junction temperature range of -40°C to +125°C and has a thermal resistance of 400°C/W junction-to-ambient. The device is RoHS compliant and features lead-free pure tin plated terminals, solderable per MIL-STD-202. Hermetically sealed glass construction ensures high reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.05 | $0.05 |
| 5,000+ | $0.04 | $0.04 |
| 10,000+ | $0.04 | $0.04 |
| 25,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakover voltage (VBO) is 28V minimum, 32V typical, and 36V maximum at 22nF capacitance.
The DB3 comes in a DO-35 (DO-204AH) through-hole package with axial leads.
The operating junction temperature range is -40°C to +125°C.
Yes, the DB3 is RoHS3 compliant and lead free as per the datasheet.
The maximum power dissipation is 150mW.
The maximum breakover current (IBO) is 100µA at 22nF capacitance.
The maximum leakage current (IB) is 10µA at VB = 0.5 times VBO(max).