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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
140 pcs
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140 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Forward Current (IF(AV)) | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Type | |
| Forward Voltage (Vf) | |
| Junction Capacitance (Cj) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature - Junction (Tj) (Max) | |
| Package / Case | |
| Recovery Time Classification | |
| Repetitive Peak Reverse Voltage (VRRM) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The DB2W60400L is a Schottky barrier diode manufactured by Panasonic Electronic Components, designed for high-efficiency rectification and switching applications. It is rated for a repetitive peak reverse voltage of 60V and an average forward current of 2A, making it suitable for low- to medium-power circuits. The diode exhibits a low forward voltage of 660 mV at 2A, minimizing power dissipation and improving thermal performance. With a reverse recovery time of just 12 ns, it is optimized for fast switching in high-frequency designs. The junction capacitance is 38 pF at 10V and 1 MHz, supporting reduced switching losses. The device is packaged in a surface-mount SOD-123F case, with the supplier device package designated as Mini2-F3-B, enabling compact PCB layouts. It is compliant with RoHS3 and REACH, and has an MSL rating of 1 (unlimited), ensuring reliable soldering and long-term stability. Typical applications include DC-DC converters, polarity protection, and freewheeling diodes in power management circuits.
The repetitive peak reverse voltage (VRRM) is 60 V.
The average forward current (IF(AV)) is 2 A.
The forward voltage (Vf) is 660 mV at 2 A.
The reverse recovery time (trr) is 12 ns.
It is housed in a surface-mount SOD-123F package, with the supplier device package Mini2-F3-B.
The junction capacitance (Cj) is 38 pF at Vr=10V and f=1 MHz.