| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
168,000 pcs
|
168000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,095 pcs
|
2095 pcs | On Request | 1 | On Request | On Request | 1970-01-01 00:20:07 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Capacitance | |
| Diode Configuration | |
| Forward Current | |
| Forward Voltage | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Package Type | |
| Peak Forward Current | |
| Peak Forward Surge Current | |
| Power Dissipation | |
| Reverse Breakdown Voltage | |
| Reverse Leakage Current | |
| Reverse Recovery Time | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The DAP222T1G is a common anode silicon epitaxial planar dual switching diode designed for ultra high speed switching applications. It features a maximum reverse voltage of 80V and a maximum forward current of 100mA, with a peak forward surge current of 2A. The forward voltage is typically 1.2V at 100mA and the reverse recovery time is 4ns typical. The diode capacitance is 3.5pF at 6V reverse bias. Power dissipation is 150mW and the junction temperature can reach up to 150°C. The device is housed in the SC-75 (SOT-416) surface mount package, ideal for low power applications where board space is limited. It is Pb-free, halogen free, and RoHS compliant. The DAP222T1G is suitable for high-speed switching, signal rectification, and clamping circuits.
80V.
100mA.
1.2V maximum.
4ns typical.
SC-75 (SOT-416) surface mount.
100nA maximum.