| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,000 pcs
|
64000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Capacitance | |
| Diode Configuration | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Power Dissipation | |
| Reverse Breakdown Voltage | |
| Reverse Leakage Current | |
| Reverse Recovery Time (trr) | |
| Reverse Voltage | |
| Speed | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The DAP222M3T5G is a common anode silicon dual switching diode array designed for ultra high speed switching applications. It is housed in the compact SOT-723 surface mount package, ideal for low power and space-constrained designs.
Electrical characteristics include a maximum reverse voltage of 80V, forward current rating of 100mA, and a forward voltage of 1.2V at 100mA. Reverse leakage current is 100nA at 70V, and reverse recovery time is 4ns. Diode capacitance is 3.5pF at 6V and 1MHz. Power dissipation is 260mW, with junction and storage temperature ranges of -55°C to +150°C.
This device is Pb-free and RoHS3 compliant, supplied in tape and reel packaging with 8000 pcs per reel. Typical applications include high-speed switching circuits, signal processing, and low power surface mount designs.
80V maximum reverse voltage.
100mA maximum forward current.
1.2V maximum.
4ns maximum under test conditions IF=5mA, VR=6V, RL=100Ω, Irr=0.1IR.
SOT-723 surface mount package.
Maximum junction temperature is 150°C; storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant and Pb-free as verified by the datasheet.